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University of Barcelona


 NANOBLOCK is supported by:

Nanoscience


 Starting date: 1 October 2009
 

further information
Dr. Michele Perego
Tel:+39-039-6036383
email:
Laboratorio MDM - IMM - CNR
Via Olivetti, 2 - 20864
Agrate Brianza(Mi) - Italy
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Consortium


The consortium is composed by two research institutes (MDM, CEMES) and one university (UB). This consortium gathers together different specialists involved for many years in nanotechnology and nanoscience. Thanks to its scientific expertise and its complementary experimental facilities, such a consortium is in position to develop the interdisciplinary work necessary for achieving successfully the goals of this proposal. The partners have accumulated experience by participating at many projects, at the regional, national and European levels, related to the objectives of this proposal.

Description of partecipants

Laboratorio Nazionale MDM, INFM-CNR. The MDM (Materials and Devices for Microelectronics) Laboratory is an Italian National Laboratory belonging to INFM, the Italian Institute for the Physics of Matter since 2006 part of CNR, the National Research Council. MDM is a state-ofthe-art facility located within the STMicroelectronics complex at Agrate Brianza, near Milan (Italy). The MDM main research activity is related to those issues in condensed matter physics relevant for microelectronics device science and technology. Major tasks of the Laboratory are the investigation of the structural, electrical, optical, and magnetic properties of materials for present and future micro and nano-electronic, and spintronic applications as well as the development of novel characterization techniques capable of addressing the always-decreasing device dimensionality. MDM Laboratory is equipped with a wide range of characterization facilities for materials: variable temperature (25-1100K) scanning probes system (AFM, STM, EFM, SKPM) in UHV, SPM system in ambient, x-ray diffraction (XRD) and reflectivity (XRR), scanning electron microscope, ToF-SIMS and XPS, electrical characterization (4.2-500K, IV, CV, GV, DLTS, noise, internal photoemission spectroscopy), optical spectroscopies (4.2-300 K, micro-Raman-UV and visible excitation, photoluminescence spectroscopy, fourier-transform infrared spectroscopy (middle- and far-IR)). MDM Laboratory is also equipped with facilities for material growth and processing in a 94 m2 clean room class 1000: atomic layer deposition, thermal and e-beam evaporator, MBE, rapid thermal processing and furnace annealing systems, wet benches for wafers cleaning, optical and e-beam photolithography.

CEMES-CNRS. The goal of CEMES ("Unité Propre du CNRS", 70 staff scientists among 150) located in TOULOUSE is to study the matter from an experimental and theoretical point of view, from the atomic to the macroscopic scales. The laboratory hosts an important activity related to the synthesis, the fabrication and the atomic scale characterization of novel materials of small dimensions and on their integration into demonstrating devices. The goal is to establish relations between atomic composition, architecture and physical or chemical properties of these nano materials. The lab owns 5 transmission electron microscopes including a TEM/FEG equipped with a spherical aberration corrector and an energy filter. FIB preparation of TEM samples can be performed with a ZEISS XB1540 CROSSBEAM. More precisely, Nanomaterial for Electronics group has an internationally recognized expertise notably in the field of defects, interfaces, strain and chemical analysis in semiconductors. In the past, this group has, for example, provided the community with a comprehensive and global image describing the evolution in size and densities of defects found after ion implantation and annealing, from magic size clusters of few atoms to dislocation loops, in Si and Ge. This thermal evolution is at the origin of the famous transient diffusion of dopant in Si and other activation anomalies. This work is still considered as state-of-the art and these concepts are today integrated in modern Si process simulators. The group has also been deeply involved in ultra low energy ion beam synthesis process (ULE-IBS) to fabricate and organize metal or semiconductor nanocrystals and nanoparticles in dielectric matrix for applications in electronics, magnetism and optics. Recently, CEMES has invented a new holographic technique (patented and later published in Nature) able to image strain in nanostructures and devices with nanometric resolution. Finally, CEMES has a long lasting experience of collaboration with one of the other partners (MDM) and major European semiconductor industries within EC funded projects (IST/FrendTech, IP/nanoCMOS, IST/ATOMICS, IP/PULLNANO, STREP/REALISE and GROWTH/NEON, coordinated by CEMES).

University of Barcelona. The Electronic Materials and Engineering (EME) group is ascribed to the Department of Electronics of the University of Barcelona. As a research unit it also belongs to the Nanoscience and Nanotechnology Institute (IN2UB) of the University of Barcelona. The activities at EME include several research lines, that can be summarize as: synthesis of materials and structures (semiconductors, dielectrics, thin and thick films, nanostructures); technology and devices (CMOS technology and devices, deposition, ion implantation, thick film technology, Si compatible optoelectronic and photonic devices); characterization (structural, optical, surface analysis, electrooptical, electrical) of materials and devices; design, fabrication and test of sensors and actuators for advanced instrumentation; nanotechnology and nanodevices. In the recent years, by joining several European projects dedicated to Si photonics, the group demonstrated the capability to contribute to front-end research in this strategic field of research. The facilities at UB-EME available for the investigation related to the project include:
Moreover, as associated unit, the group has full and privileged access to all the facilities at the National Center of Microelectronics (CNM) in Bellaterra (Barcelona), which are the common ones encountered in a clean-room laboratory for CMOS-related devices development and fabrication.